Press-Pack IGBT
Press-pack IGBT (IEGT)
| TYPE | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Cherechedza:D- pamwe diode chikamu, A-pasina diode chikamu
Sezvineiwo, iyo solder yekubata IGBT mamodule akaiswa mune switch giya yeinochinjika DC transmission system.Iyo module package ndeye single side heat dissipation.Simba remuchina rinogumira uye harina kufanira kubatanidzwa munhevedzano, hupenyu husina kunaka mumhepo yemunyu, kuzununguka kwakashata kunopesana nekuvhundutsa kana kuneta kwekupisa.
Iyo itsva type press-contact high-power press-pack IGBT device haingogadzirise zvachose matambudziko echinzvimbo mukutengesa, kuneta kwekupisa kwekutengesa zvinhu uye kuderera kwekushanda kweimwe-sided heat dissipation asiwo inobvisa kupisa kwekushisa pakati pezvinhu zvakasiyana-siyana, kuderedza ukuru uye uremu.Uye zvakanyanya kunatsiridza kushanda zvakanaka uye kuvimbika kweiyo IGBT mudziyo.Yakanyatsokodzera kugutsa iyo yakakwirira-simba, yakakwira-voltage, yakakwirira-kuvimbika zvinodiwa zveinochinjika DC transmission system.
Kutsiva kweiyo solder yekubata mhando nepress-pack IGBT kwakakosha.
Kubva 2010, Runau Electronics yakakwenenzverwa kugadzira mhando itsva yekutsikirira-pack IGBT mudziyo uye kubudirira kugadzirwa muna 2013. Kuita kwacho kwakasimbiswa nekukodzera kwenyika uye budiriro yekucheka yakapera.
Iye zvino tinokwanisa kugadzira uye kupa akatevedzana press-pack IGBT yeIC siyana mu600A kusvika 3000A uye VCES renji mu1700V kusvika 6500V.Tarisiro yakanaka kwazvo yekutsikisa-pack IGBT yakagadzirwa kuChina kuti ishandiswe muChina inochinjika DC transmission system inotarisirwa zvakanyanya uye ichave imwe yepasirese mamaira dombo reChina magetsi emagetsi indasitiri mushure mekumhanya kwechitima chemagetsi.
Nhanganyaya pfupi yeTypical Mode:
1. Mode: Press-pack IGBT CSG07E1700
●Magetsi maitiro mushure mekurongedza nekutsikirira
● Reverseparallelzvakabatanakukurumidza kupora diodeakagumisa
● Parameter:
Yakayerwa kukosha (25℃)
a.Muunganidzi Emitter Voltage: VGES=1700 (V)
b.Gedhi Emitter Voltage: VCES = ± 20 (V)
c.Muunganidzi Iyezvino: IC=800(A)ICP=1600(A)
d.Muunganidzi Simba Kubvisa: PC=4440(W)
e.Kushanda Junction Temperature: Tj=－20~125℃
f.Kuchengetedza Tembiricha: Tstg=－40~125℃
Tarira: mudziyo uchakuvadzwa kana wadarika kukosha kwakatarwa
ZvemagetsiCharacteristics, TC＝125℃，Rth (thermal resistance yejunction tocase）isina kubatanidzwa
a.Gate Leakage Yazvino: IGES=±5(μA)
b.Muunganidzi Emitter Kuvharira Iyezvino ICES=250(mA)
c.Collector Emitter Saturation Voltage: VCE(sat)=6(V)
d.Gate Emitter Threshold Voltage: VGE(th)=10(V)
e.Batidza nguva: Matani = 2.5μs
f.Nguva yekudzima: Toff = 3μs
2. Mode: Press-pack IGBT CSG10F2500
●Magetsi maitiro mushure mekurongedza nekutsikirira
● Reverseparallelzvakabatanakukurumidza kupora diodeakagumisa
● Parameter:
Yakayerwa kukosha (25℃)
a.Muunganidzi Emitter Voltage: VGES=2500 (V)
b.Gedhi Emitter Voltage: VCES = ± 20 (V)
c.Muunganidzi Iyezvino: IC=600(A)ICP=2000(A)
d.Muunganidzi Simba Kubvisa: PC=4800(W)
e.Kushanda Junction Temperature: Tj=－40~125℃
f.Kuchengetedza Tembiricha: Tstg=－40~125℃
Tarira: mudziyo uchakuvadzwa kana wadarika kukosha kwakatarwa
ZvemagetsiCharacteristics, TC＝125℃，Rth (thermal resistance yejunction tocase）isina kubatanidzwa
a.Gate Leakage Yazvino: IGES=±15(μA)
b.Muunganidzi Emitter Kuvharira Iyezvino ICES=25(mA)
c.Collector Emitter Saturation Voltage: VCE(sat)=3.2 (V)
d.Gate Emitter Threshold Voltage: VGE(th)=6.3(V)
e.Batidza nguva: Matani = 3.2μs
f.Nguva yekudzima: Toff = 9.8μs
g.Diode Forward voltage: VF = 3.2 V
h.Diode Reverse Recovery Time: Trr=1.0 μs
3. Mode: Press-pack IGBT CSG10F4500
●Magetsi maitiro mushure mekurongedza nekutsikirira
● Reverseparallelzvakabatanakukurumidza kupora diodeakagumisa
● Parameter:
Yakayerwa kukosha (25℃)
a.Muunganidzi Emitter Voltage: VGES=4500 (V)
b.Gedhi Emitter Voltage: VCES = ± 20 (V)
c.Muunganidzi Iyezvino: IC=600(A)ICP=2000(A)
d.Muunganidzi Simba Kubvisa: PC = 7700 (W)
e.Kushanda Junction Temperature: Tj=－40~125℃
f.Kuchengetedza Tembiricha: Tstg=－40~125℃
Tarira: mudziyo uchakuvadzwa kana wadarika kukosha kwakatarwa
ZvemagetsiCharacteristics, TC＝125℃，Rth (thermal resistance yejunction tocase）isina kubatanidzwa
a.Gate Leakage Yazvino: IGES=±15(μA)
b.Muunganidzi Emitter Kuvharira Iyezvino ICES=50(mA)
c.Collector Emitter Saturation Voltage: VCE(sat)=3.9 (V)
d.Gate Emitter Threshold Voltage: VGE(th)=5.2 (V)
e.Batidza nguva: Matani = 5.5μs
f.Kudzima nguva: Toff = 5.5μs
g.Diode Forward voltage: VF = 3.8 V
h.Diode Reverse Recovery Time: Trr=2.0 μs
Cherechedza:Press-pack IGBT mukana mune yenguva refu yakakwira mechani kuvimbika, yakakwira kuramba kukuvara uye hunhu hweiyo press yekubatanidza chimiro, iri nyore kushandiswa mumutsara mudziyo, uye ichienzaniswa neyechinyakare GTO thyristor, IGBT ndiyo voltage-drive nzira. .Naizvozvo, iri nyore kushanda, yakachengeteka uye yakafara siyana yekushandisa.